The Effects of a Few Formation Parameters on Porous Silicon Production in HF/HNO3 Using Ag-Assisted Etching and a Comparison with a Stain Etching Method

Abstract In a solution of HF with HNO 3 as an oxidizing agent, silver-catalyzed etching p-type silicon is made easier. Before immersing in the etchant solution, silver (Ag) was electroless deposited on p-Si (100) surface. By stain HF/HNO , porous layer (PSL) also produced p-Si. Electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), atomic force (AFM), and diffraction (XRD) were used to evaluate properties PSL. According SEM, Ag + ion at concentration 1 × 10 −3 M optimal for depositing Si before chemical resulting PSL uniformly distributed pores. The EIS data showed that coated dissolves faster 22 HF/0.5 than untreated Si, formation homogenous regular round pores, proven by SEM micrographs. An acceptable electrical circuit model two-time constants fit experimental values. Increased concentrations or oxidizer aid dissolution rapid development PS. AFM analysis revealed when time increases, pore width roughness surface increase. spectra determine crystallinity after various times.